- fast switching device (trr<4.0ns) - surface mount device type - moisture sensitivity level 1 - matte tin (sn) lead finish - pb free version and rohs compliant - packing code with suffix "g" means green compound (halogen-free) - case: flat lead sod-323f small outline plastic package - polarity: indicated by cathode band - weight: 4.6 0.5 mg - marking code: w2 symbol unit p d mw i o ma t j o c t stg o c symbol unit v (br) v c j pf t rr ns document number: ds_s1501001 version: b15 BAS316WS taiwan semiconductor small signal product 200mw high-speed switching smd diode features sod-323f 200 mechanical data - terminal: matte tin plat ed, lead free., solderable per mil-std-202, method 208 guaranteed - high temperature soldering guaranteed : 260c/10s maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter value reverse recovery time junction capacitance v a pulse width = 1 ms non-repetitive peak forward surge current pulse width = 1 s i f = 10 ma i f = 1.0 ma forward voltage reverse leakage voltage storage temperature range operating junction temperature v f i r v r = 25 v 1.5 4.0 i f = i r = 10 ma , i rr = 0.1 i r v r = 0 , f = 1.0 mhz v r = 75 v i f = 150 ma i f = 50 ma - - 1.250 1 0.03 0.715 0.855 1.000 - - - - - a -65 to + 150 150 1.0 4.0 i frm average forward current power dissipation max min parameter 100 - i r = 100 a reverse breakdown voltage 250
small signal product (t a =25c unless otherwise noted) document number: ds_s1501001 version: b15 taiwan semiconductor BAS316WS ratings and characteristics curves 0 25 50 75 100 125 150 175 200 225 250 275 300 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 instantaneous forward current (ma) instantaneous forward voltage (v) fig. 1 typical forward characteristics 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 160 180 200 reverse current ( a) junction temperature ( o c) v r =75v v r =75v v r =25v typ typ 0 50 100 150 200 250 0 25 50 75 100 125 150 175 power dissipation (mw) ambient temperature (c) fig. 3 admissible power dissipation curve 0 0.2 0.4 0.6 0.8 0 2 4 6 8 10121416 junction capacitance (pf) reverse voltage (v) fig. 4 typical junction capacitance fig. 2 reverse current as a function of junction temperature max
dimensions min max min max a 1.15 1.35 0.045 0.053 b 2.30 2.80 0.091 0.110 c 0.25 0.40 0.010 0.016 d 1.60 1.80 0.063 0.071 e 0.80 1.10 0.031 0.043 f 0.05 0.25 0.002 0.010 suggested pad layout x x1 y note: 1. the suggested land pattern dimensions have been provi ded for refernece only, as actual pad layouts may vary depending on application. document number: ds_s1501001 version: b15 typ. typ. BAS316WS taiwan semiconductor small signal product order information (example) dim. unit (mm) unit (inch) sod-323f 0.710 0.028 2.900 0.114 0.403 0.016 dim. unit (mm) unit (inch) BAS316WS rrg green compound ? code packing ? code part ? no.
small signal product assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_s1501001 version: b15 BAS316WS taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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